IRF614 Datasheet and Replacement
Type Designator: IRF614
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 42 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220AB
- MOSFET Cross-Reference Search
IRF614 Datasheet (PDF)
irf614pbf.pdf

IRF614, SiHF614Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Fast SwitchingQg (Max.) (nC) 8.2 COMPLIANT Ease of ParallelingQgs (nC) 1.8 Simple Drive RequirementsQgd (nC) 4.5Configuration Single Compliant to RoHS Directive 2002/95/ECDD
irf614.pdf

PD - 94849IRF614PbF Lead-Free11/25/06Document Number: 91025 www.vishay.com1IRF614PbFDocument Number: 91025 www.vishay.com2IRF614PbFDocument Number: 91025 www.vishay.com3IRF614PbFDocument Number: 91025 www.vishay.com4IRF614PbFDocument Number: 91025 www.vishay.com5IRF614PbFDocument Number: 91025 www.vishay.com6IRF614PbFTO-220AB Package Outline
irf614 sihf614.pdf

IRF614, SiHF614Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Fast SwitchingQg (Max.) (nC) 8.2 COMPLIANT Ease of ParallelingQgs (nC) 1.8 Simple Drive RequirementsQgd (nC) 4.5Configuration Single Compliant to RoHS Directive 2002/95/ECDD
Datasheet: IRF543 , IRF550A , IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , AON7410 , IRF614A , IRF614S , IRF615 , IRF620 , IRF620A , IRF620FI , IRF620S , IRF621 .
History: SPB65R180G
Keywords - IRF614 MOSFET datasheet
IRF614 cross reference
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History: SPB65R180G



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