PMV65UN
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PMV65UN
Маркировка: ED
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.31
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 2.2
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 18
ns
Cossⓘ - Выходная емкость: 52
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.076
Ohm
Тип корпуса:
SOT23
Аналог (замена) для PMV65UN
PMV65UN
Datasheet (PDF)
..1. Size:267K tysemi
pmv65un.pdf 
Product specificationPMV65UN20 V, single N-channel Trench MOSFET13 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Low threshold voltage Very fast switching
9.1. Size:79K philips
pmv65xp.pdf 
PMV65XPP-channel TrenchMOS extremely low level FETRev. 01 28 September 2004 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode field effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low threshold voltage Low on-state resistance.1.3 Applications Low power DC-to-DC converters Battery management Load sw
9.2. Size:264K nxp
pmv65xp.pdf 
PMV65XP20 V, single P-channel Trench MOSFET12 February 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology3. Applicati
9.3. Size:238K nxp
pmv65xpea.pdf 
PMV65XPEA20 V, P-channel Trench MOSFET27 November 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot
9.4. Size:235K nxp
pmv65xpe.pdf 
PMV65XPE20 V, P-channel Trench MOSFET25 April 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 89
9.5. Size:715K nxp
pmv65enea.pdf 
PMV65ENEA40 V, N-channel Trench MOSFET28 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology Electrostatic Disch
9.6. Size:324K tysemi
pmv65xp.pdf 
Product specificationPMV65XP20 V, single P-channel Trench MOSFET12 February 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET t
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