PMV65UN Datasheet. Specs and Replacement
Type Designator: PMV65UN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 52 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: SOT23
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PMV65UN datasheet
pmv65xp.pdf
PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low threshold voltage Low on-state resistance. 1.3 Applications Low power DC-to-DC converters Battery management Load sw... See More ⇒
pmv65xp.pdf
PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applicati... See More ⇒
pmv65xpea.pdf
PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot ... See More ⇒
Detailed specifications: MGSF1N02LT1G, MGSF1N03LT1G, MGSF2N02ELT1G, NTR1P02LT1G, PMV170UN, PMV185XN, PMV33UPE, PMV50UPE, K3569, PMV90EN, QM3001K, QM3007K, WNM2023, WNM2025, WNM2027, WNM2034, XP151A11B0MR
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