SI2318CDS-T1-GE3 - аналоги, параметры транзистора

SI2318CDS-T1-GE3 даташит

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SI2318CDS-T1-GE3 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SO

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SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 51m (VGS = 4.5V) 0.95 -0.1 +0.1 1.9 -0.2 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Sy

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New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.042 at VGS = 10 V TrenchFET Power MOSFET 5.6 40 2.9 nC 100 % Rg Tested 0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converte

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SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) 1 2 RDS(ON) 51m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol

Другие MOSFET... VBA1158N , VBA1101M , CS5N60A4H , CS55N06A4 , VB2355 , VB264K , VB1695 , VB2103K , IRFB4110 , SI2318DS-T1-GE3 , SI2319CDS-T1-GE3 , SI2319DS-T1-GE3 , SI2323CDS-T1-GE3 , SI2323DDS-T1-GE3 , SI2323DS-T1 , SI2338DS-T1-GE3 , CS4N80FA9HD .