SI4465ADY-T1-E3 - параметры транзистора MOSFET, его аналоги, datasheet

SI4465ADY-T1-E3 Datasheet (PDF)

0.1. Size:819K cn vbsemi
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SI4465ADY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2

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Si4465ADYVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)b Qg (Typ.)Available0.009 at VGS = - 4.5 V - 13.7 TrenchFET Power MOSFET 1.8 V Rated0.011 at VGS = - 2.5 V - 12.4 55 nC- 8 100 % Rg Tested0.016 at VGS = - 1.8 V - 10SSO-8 SD1 8 GS D2 7 SD

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Si4465DYVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.009 @ VGS = 4.5 V 148 0.011 @ VGS = 2.5 V 120.016 @ VGS = 1.8 V 10SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDOrdering Information: Si4465DY-T1P-Channel MOSFETSi4465DY-T1E3 (Lead (Pb)free)ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTH

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