Справочник MOSFET. CS8N90A8

 

CS8N90A8 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS8N90A8
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 146 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO220AB
 

 Аналог (замена) для CS8N90A8

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS8N90A8 Datasheet (PDF)

 8.1. Size:647K  crhj
 cs8n90 a8.pdf pdf_icon

CS8N90A8

Silicon N-Channel Power MOSFET R CS8N90 A8 VDSS 900 V General Description ID 8 A CS8N90 A8, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.2. Size:770K  crhj
 cs8n90f a9hd.pdf pdf_icon

CS8N90A8

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.3. Size:652K  crhj
 cs8n90f a9.pdf pdf_icon

CS8N90A8

Silicon N-Channel Power MOSFET R CS8N90F A9 VDSS 900 V General Description ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.4. Size:770K  wuxi china
 cs8n90fa9hd.pdf pdf_icon

CS8N90A8

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TPC8103 , TPC8104 , TK40P04M , CS8N70FA9H2-G , CS8N80A8D , CS8N80A8H , VB1330 , CS8N80FA9H , IRF3710 , CS8N90FA9 , VB162K , CS90N03B3 , UT9435G , UTM4052L , UTM6016G , CSZ44V-1 , AO4600 .

History: APT4014BVFR

 

 
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