All MOSFET. CS8N90_A8 Datasheet

 

CS8N90_A8 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS8N90_A8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 130 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 41 nS

Drain-Source Capacitance (Cd): 146 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO220AB

CS8N90_A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS8N90_A8 Datasheet (PDF)

1.1. cs8n90 a8.pdf Size:647K _crhj

CS8N90_A8
CS8N90_A8

Silicon N-Channel Power MOSFET R ○ CS8N90 A8 VDSS 900 V General Description: ID 8 A CS8N90 A8, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

4.1. cs8n90fa9hd.pdf Size:770K _update_mosfet

CS8N90_A8
CS8N90_A8

Silicon N-Channel Power MOSFET R ○ CS8N90F A9HD VDSS 900 V General Description: ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

4.2. cs8n90f a9hd.pdf Size:770K _crhj

CS8N90_A8
CS8N90_A8

Silicon N-Channel Power MOSFET R ○ CS8N90F A9HD VDSS 900 V General Description: ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 4.3. cs8n90f a9.pdf Size:652K _crhj

CS8N90_A8
CS8N90_A8

Silicon N-Channel Power MOSFET R ○ CS8N90F A9 VDSS 900 V General Description: ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25℃) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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