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CS8N90A8 Spec and Replacement


   Type Designator: CS8N90A8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220AB

 CS8N90A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS8N90A8 Specs

 8.1. Size:647K  crhj
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CS8N90A8

Silicon N-Channel Power MOSFET R CS8N90 A8 VDSS 900 V General Description ID 8 A CS8N90 A8, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 8.2. Size:770K  crhj
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CS8N90A8

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 8.3. Size:652K  crhj
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CS8N90A8

Silicon N-Channel Power MOSFET R CS8N90F A9 VDSS 900 V General Description ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25 ) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

 8.4. Size:770K  wuxi china
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CS8N90A8

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

Detailed specifications: TPC8103 , TPC8104 , TK40P04M , CS8N70FA9H2-G , CS8N80A8D , CS8N80A8H , VB1330 , CS8N80FA9H , AO3400 , CS8N90FA9 , VB162K , CS90N03B3 , UT9435G , UTM4052L , UTM6016G , CSZ44V-1 , AO4600 .

History: 25P10

Keywords - CS8N90A8 MOSFET specs

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