Справочник MOSFET. AP2322GN

 

AP2322GN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP2322GN
   Маркировка: X0*
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.833 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для AP2322GN

 

 

AP2322GN Datasheet (PDF)

 ..1. Size:182K  ape
ap2322gn.pdf

AP2322GN
AP2322GN

AP2322GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Small Package Outline RDS(ON) 90m Surface Mount Package ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resis

 ..2. Size:1154K  kexin
ap2322gn.pdf

AP2322GN
AP2322GN

SMD Type MOSFETN-Channel MOSFETAP2322GN (KP2322GN)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 2.5 A1 2+0.1+0.050.95 -0.1 RDS(ON) 90m (VGS = 4.5V) 0.1 -0.01+0.11.9 -0.1 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V)1. Gate2. Source3. DrainDGS Absolute Maximum Ratings Ta

 0.1. Size:90K  ape
ap2322gn-hf.pdf

AP2322GN
AP2322GN

AP2322GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V gate drive BVDSS 20VD Simple Drive Requirement RDS(ON) 90m Surface mount package ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

 0.2. Size:1302K  kexin
ap2322gn-3.pdf

AP2322GN
AP2322GN

SMD Type MOSFETN-Channel MOSFETAP2322GN (KP2322GN)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 2.5 A1 2 RDS(ON) 90m (VGS = 4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V)1. Gate2. Source3. DrainDGS Absolute Maximum Rating

 9.1. Size:94K  ape
ap2328gn-hf.pdf

AP2322GN
AP2322GN

AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

 9.2. Size:144K  ape
ap2326gn.pdf

AP2322GN
AP2322GN

AP2326GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2326 series are from Advanced Power innovated design andsilicon process technology to achieve

 9.3. Size:55K  ape
ap2321gn-hf.pdf

AP2322GN
AP2322GN

AP2321GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

 9.4. Size:56K  ape
ap2329gn-hf.pdf

AP2322GN
AP2322GN

AP2329GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 48m Surface Mount Device ID - 4.3AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, lo

 9.5. Size:94K  ape
ap2326gn-hf.pdf

AP2322GN
AP2322GN

AP2326GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

 9.6. Size:146K  ape
ap2320gn.pdf

AP2322GN
AP2322GN

AP2320GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 9.7. Size:147K  ape
ap2325gen.pdf

AP2322GN
AP2322GN

AP2325GENHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,

 9.8. Size:95K  ape
ap2323gn-hf.pdf

AP2322GN
AP2322GN

AP2323GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

 9.9. Size:181K  ape
ap2323gn.pdf

AP2322GN
AP2322GN

AP2323GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

 9.10. Size:55K  ape
ap2320n-hf.pdf

AP2322GN
AP2322GN

AP2320N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

 9.11. Size:147K  ape
ap2321gn.pdf

AP2322GN
AP2322GN

AP2321GNHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1AS RoHS Compliant & Halogen-FreeSOT-23SGDescription DAP2321 series are from Advanced Power innovated design and siliconprocess technology to achieve the low

 9.12. Size:93K  ape
ap2325geu6-hf.pdf

AP2322GN
AP2322GN

AP2325GEU6-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -20VDD Small Package Outline RDS(ON) 145mG Surface Mount Device ID -1.8ADDSOT-363 RoHS Compliant & Halogen-FreeDDescriptionAP2325 series are from Advanced Power innovated design andGsilicon process technology

 9.13. Size:54K  ape
ap2320gn-hf.pdf

AP2322GN
AP2322GN

AP2320GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resist

 9.14. Size:94K  ape
ap2324gn-hf.pdf

AP2322GN
AP2322GN

AP2324GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VD Lower Gate Charge RDS(ON) 25m Surface mount package ID 6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistanc

 9.15. Size:59K  ape
ap2325gen-hf.pdf

AP2322GN
AP2322GN

AP2325GEN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,

 9.16. Size:55K  ape
ap2327gn-hf.pdf

AP2322GN
AP2322GN

AP2327GN-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 37m Surface Mount Device ID - 5.1AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provid

 9.17. Size:179K  ape
ap2323agn.pdf

AP2322GN
AP2322GN

AP2323AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAP2323A series are from Advanced Power innovated design andsilicon process technology to achieve the

 9.18. Size:176K  ape
ap2328gn.pdf

AP2322GN
AP2322GN

AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2328 series are from Advanced Power innovated design andsilicon process technology to achieve

 9.19. Size:847K  cn vbsemi
ap2321gn.pdf

AP2322GN
AP2322GN

AP2321GNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

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History: 2SK3498 | 2N7288D

 

 

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