AP2322GN - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP2322GN
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.833
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 2.5
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 12
ns
Cossⓘ - Выходная емкость: 55
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09
Ohm
Тип корпуса:
SOT23
Аналог (замена) для AP2322GN
AP2322GN Datasheet (PDF)
..1. Size:182K ape
ap2322gn.pdf 

AP2322GN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20V D Small Package Outline RDS(ON) 90m Surface Mount Package ID 2.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resis
..2. Size:1154K kexin
ap2322gn.pdf 

SMD Type MOSFET N-Channel MOSFET AP2322GN (KP2322GN) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V ID = 2.5 A 1 2 +0.1 +0.05 0.95 -0.1 RDS(ON) 90m (VGS = 4.5V) 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V) 1. Gate 2. Source 3. Drain D G S Absolute Maximum Ratings Ta
0.1. Size:90K ape
ap2322gn-hf.pdf 

AP2322GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V gate drive BVDSS 20V D Simple Drive Requirement RDS(ON) 90m Surface mount package ID 2.5A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible
0.2. Size:1302K kexin
ap2322gn-3.pdf 

SMD Type MOSFET N-Channel MOSFET AP2322GN (KP2322GN) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V ID = 2.5 A 1 2 RDS(ON) 90m (VGS = 4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V) 1. Gate 2. Source 3. Drain D G S Absolute Maximum Rating
9.1. Size:94K ape
ap2328gn-hf.pdf 

AP2328GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 60m Surface Mount Device ID 4A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible
9.2. Size:144K ape
ap2326gn.pdf 

AP2326GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2326 series are from Advanced Power innovated design and silicon process technology to achieve
9.3. Size:55K ape
ap2321gn-hf.pdf 

AP2321GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1A S RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low
9.4. Size:56K ape
ap2329gn-hf.pdf 

AP2329GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 48m Surface Mount Device ID - 4.3A S RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, lo
9.5. Size:94K ape
ap2326gn-hf.pdf 

AP2326GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible
9.6. Size:146K ape
ap2320gn.pdf 

AP2320GN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lowe
9.7. Size:147K ape
ap2325gen.pdf 

AP2325GEN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,
9.8. Size:95K ape
ap2323gn-hf.pdf 

AP2323GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 38m Surface Mount Device ID -5A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low
9.9. Size:181K ape
ap2323gn.pdf 

AP2323GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 38m Surface Mount Device ID -5A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low
9.10. Size:55K ape
ap2320n-hf.pdf 

AP2320N-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lo
9.11. Size:147K ape
ap2321gn.pdf 

AP2321GN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1A S RoHS Compliant & Halogen-Free SOT-23S G Description D AP2321 series are from Advanced Power innovated design and silicon process technology to achieve the low
9.12. Size:93K ape
ap2325geu6-hf.pdf 

AP2325GEU6-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -20V D D Small Package Outline RDS(ON) 145m G Surface Mount Device ID -1.8A D D SOT-363 RoHS Compliant & Halogen-Free D Description AP2325 series are from Advanced Power innovated design and G silicon process technology
9.13. Size:54K ape
ap2320gn-hf.pdf 

AP2320GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resist
9.14. Size:94K ape
ap2324gn-hf.pdf 

AP2324GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V D Lower Gate Charge RDS(ON) 25m Surface mount package ID 6A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistanc
9.15. Size:59K ape
ap2325gen-hf.pdf 

AP2325GEN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,
9.16. Size:55K ape
ap2327gn-hf.pdf 

AP2327GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 37m Surface Mount Device ID - 5.1A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provid
9.17. Size:179K ape
ap2323agn.pdf 

AP2323AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 38m Surface Mount Device ID -5A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2323A series are from Advanced Power innovated design and silicon process technology to achieve the
9.18. Size:176K ape
ap2328gn.pdf 

AP2328GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 60m Surface Mount Device ID 4A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2328 series are from Advanced Power innovated design and silicon process technology to achieve
9.19. Size:847K cn vbsemi
ap2321gn.pdf 

AP2321GN www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23
9.20. Size:1420K cn apm
ap2320mi.pdf 

AP2320MI 20V N-Channel Enhancement Mode MOSFET Description The AP2320MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =8A DS D R
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