IRF720S datasheet, аналоги, основные параметры
Наименование производителя: IRF720S 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
Тип корпуса: TO263
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Аналог (замена) для IRF720S
- подборⓘ MOSFET транзистора по параметрам
IRF720S даташит
..1. Size:1163K international rectifier
irf720spbf.pdf 
PD - 95119 IRF720SPbF Lead-Free 3/17/04 Document Number 91044 www.vishay.com 1 IRF720SPbF Document Number 91044 www.vishay.com 2 IRF720SPbF Document Number 91044 www.vishay.com 3 IRF720SPbF Document Number 91044 www.vishay.com 4 IRF720SPbF Document Number 91044 www.vishay.com 5 IRF720SPbF Document Number 91044 www.vishay.com 6 IRF720SPbF D2Pak Package Outli
..3. Size:199K vishay
irf720spbf sihf720s.pdf 
IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 1.8 Available in Tape and Reel Qg (Max.) (nC) 20 Dynamic dV/dt Rating Qgs (nC) 3.3 Repetitive Avalanche Rated Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Sing
8.2. Size:273K international rectifier
irf7205pbf-1.pdf 
IRF7205PbF-1 HEXFET Power MOSFET A VDS -30 V 1 8 S D RDS(on) max 2 7 0.07 S D (@V = -10V) GS 3 6 RDS(on) max S D 0.13 (@V = -4.5V) GS 4 5 G D Qg (typical) 27 nC SO-8 ID Top View -4.6 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturi
8.3. Size:277K international rectifier
irf7205pbf.pdf 
IRF7205PbF l Adavanced Process Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET 2 7 S D l Surface Mount l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D l Fast Switching l Lead-Free Top View Description
8.4. Size:894K international rectifier
irf720.pdf 
PD - 94844 IRF720PbF Lead-Free 11/14/03 Document Number 91043 www.vishay.com 1 IRF720PbF Document Number 91043 www.vishay.com 2 IRF720PbF Document Number 91043 www.vishay.com 3 IRF720PbF Document Number 91043 www.vishay.com 4 IRF720PbF Document Number 91043 www.vishay.com 5 IRF720PbF Document Number 91043 www.vishay.com 6 IRF720PbF TO-220AB Package Outline
8.6. Size:182K international rectifier
irf7201.pdf 
PD - 91100C PRELIMINARY IRF7201 HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn
8.7. Size:150K international rectifier
irf7207pbf.pdf 
PD - 95166 IRF7207PbF HEXFET Power MOSFET l Generation 5 Technology A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D l Fast Switching RDS(on) = 0.06 l Lead-Free Top View Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techni
8.8. Size:166K international rectifier
irf7205.pdf 
PD - 9.1104B IRF7205 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -30V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.070 Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -4.6A Fast Switching T op View Description Fourth Generation HEXFETs from International Rectifier utilize advanced process
8.9. Size:173K international rectifier
irf7201pbf.pdf 
PD- 95022 IRF7201PbF l Generation V Technology HEXFET Power MOSFET l Ultra Low On-Resistance A A 1 8 l N-Channel MOSFET S D VDSS = 30V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 l Fast Switching G D RDS(on) = 0.030 l Lead-Free Top View Description Fifth Generation HEXFET power MOSFETs from International Rectifier utiliz
8.10. Size:243K international rectifier
irf7204pbf.pdf 
PD - 95165 IRF7204PbF HEXFET Power MOSFET l Adavanced Process Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -20V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D RDS(on) = 0.060 l Dynamic dv/dt Rating 4 5 G D l Fast Switching l Lead-Free ID = -5.3A Top View Description Fourth Generation HEXFETs from International Rectifier util
8.11. Size:89K international rectifier
irf7207.pdf 
PD - 91879A IRF7207 HEXFET Power MOSFET Generation 5 Technology A 1 8 S D P-Channel Mosfet VDSS = -20V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D Dynamic dv/dt Rating 4 5 G D Fast Switching RDS(on) = 0.06 Top View Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre
8.12. Size:145K international rectifier
irf7204.pdf 
PD - 9.1103B IRF7204 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.060 Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -5.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced process
8.13. Size:396K international rectifier
auirf7207q.pdf 
AUTOMOTIVE GRADE AUIRF7207Q Features HEXFET Power MOSFET Advanced Process Technology A Low On-Resistance 1 8 VDSS -20V S D 2 7 Logic Level Gate Drive S D 3 6 P-Channel MOSFET S D RDS(on) max 0.06 4 5 G D Dynamic dV/dT Rating 150 C Operating Temperature ID Top View -5.4A Fast Switching Fully Avalanche Rate
8.16. Size:926K samsung
irf720a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris
8.17. Size:201K vishay
irf720 sihf720.pdf 
IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
8.18. Size:176K vishay
irf720lpbf sihf720l.pdf 
IRF720S, SiHF720S, IRF720L, SiHF720L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount Available in tape and reel VDS (V) 400 Dynamic dV/dt rating RDS(on) ( )VGS = 10 V 1.8 Available Repetitive avalanche rated Qg (Max.) (nC) 20 Fast switching Qgs (nC) 3.3 Ease of paralleling Available Simple drive requirements Q
8.19. Size:201K vishay
irf720pbf sihf720.pdf 
IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
8.20. Size:1602K infineon
irf720 sihf720.pdf 
IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Lead (Pb)-free Available D DESCRIPTION
8.21. Size:1894K kexin
irf7205.pdf 
SMD Type MOSFET P-Channel MOSFET IRF7205 (KRF7205) SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V) 1.50 0.15 RDS(ON) 70m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V) 1 Source 5 Drain Fast Switching 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate A 1 8 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter
8.22. Size:2255K cn vbsemi
irf7204tr.pdf 
IRF7204TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical
8.23. Size:806K cn vbsemi
irf7205tr.pdf 
IRF7205TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top
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