All MOSFET. IRF720S Datasheet

 

IRF720S MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF720S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 3.3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: D2PAK

IRF720S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF720S PDF doc:

1.1. irf720spbf.pdf Size:1163K _international_rectifier

IRF720S
IRF720S

PD - 95119 IRF720SPbF Lead-Free 3/17/04 Document Number: 91044 www.vishay.com 1 IRF720SPbF Document Number: 91044 www.vishay.com 2 IRF720SPbF Document Number: 91044 www.vishay.com 3 IRF720SPbF Document Number: 91044 www.vishay.com 4 IRF720SPbF Document Number: 91044 www.vishay.com 5 IRF720SPbF Document Number: 91044 www.vishay.com 6 IRF720SPbF D2Pak Package Outline D

1.2. irf720s.pdf Size:363K _international_rectifier

IRF720S
IRF720S

4.1. irf720-1-2-3-fi.pdf Size:476K _st2

IRF720S
IRF720S

4.2. irf720b.pdf Size:879K _fairchild_semi

IRF720S
IRF720S

November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to Fast switchi

4.3. irf7204.pdf Size:145K _international_rectifier

IRF720S
IRF720S

PD - 9.1103B IRF7204 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.060? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -5.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing te

4.4. irf7205.pdf Size:166K _international_rectifier

IRF720S
IRF720S

PD - 9.1104B IRF7205 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -30V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.070? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -4.6A Fast Switching T op View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing te

4.5. irf7201.pdf Size:182K _international_rectifier

IRF720S
IRF720S

PD - 91100C PRELIMINARY IRF7201 HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

4.6. irf7207.pdf Size:89K _international_rectifier

IRF720S
IRF720S

PD - 91879A IRF7207 HEXFET Power MOSFET Generation 5 Technology A 1 8 S D P-Channel Mosfet VDSS = -20V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D Dynamic dv/dt Rating 4 5 G D Fast Switching RDS(on) = 0.06? Top View Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

4.7. irf720.pdf Size:894K _international_rectifier

IRF720S
IRF720S

PD - 94844 IRF720PbF Lead-Free 11/14/03 Document Number: 91043 www.vishay.com 1 IRF720PbF Document Number: 91043 www.vishay.com 2 IRF720PbF Document Number: 91043 www.vishay.com 3 IRF720PbF Document Number: 91043 www.vishay.com 4 IRF720PbF Document Number: 91043 www.vishay.com 5 IRF720PbF Document Number: 91043 www.vishay.com 6 IRF720PbF TO-220AB Package Outline Dime

4.8. irf720a.pdf Size:926K _samsung

IRF720S
IRF720S

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? Lower RDS(ON) : 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

4.9. irf720_sihf720.pdf Size:201K _vishay

IRF720S
IRF720S

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thi

4.10. irf7205.pdf Size:1894K _kexin

IRF720S
IRF720S

SMD Type MOSFET P-Channel MOSFET IRF7205 (KRF7205) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-4.6 A (VGS =-10V) 1.50 0.15 ● RDS(ON) < 70mΩ (VGS =-10V) ● RDS(ON) < 130mΩ (VGS =-4.5V) 1 Source 5 Drain ● Fast Switching 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate A 1 8 S D 2 7 S D 3 6 S D 4 5 G D ■ Absolute Maximum Ratings Ta = 25℃ Parameter

Datasheet: IRF713 , IRF720 , IRF7201 , IRF7204 , IRF7205 , IRF7207 , IRF720A , IRF720FI , IRF630A , IRF721 , IRF722 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL .

 


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