Справочник MOSFET. SM6033NSG

 

SM6033NSG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM6033NSG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 29 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 90 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
   Тип корпуса: TO263

 Аналог (замена) для SM6033NSG

 

 

SM6033NSG Datasheet (PDF)

 ..1. Size:275K  sino
 sm6033nsg.pdf

SM6033NSG SM6033NSG

SM6033NSGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/200Aa, RDS(ON)= 3.4m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available Top View of TO-263-3(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS Uninterruptible Power SupplyS High Speed Power SwitchingN-Channel MOSFETOrderin

 6.1. Size:246K  sino
 sm6033nsf.pdf

SM6033NSG SM6033NSG

SM6033NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/200A**, RDS(ON)= 3.4m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG High Efficiency Synchronous Rectification in SMPS Uninterruptible Power SupplyS High Speed Power SwitchingN-Channel MOSFETOrdering a

 7.1. Size:247K  sino
 sm6033naf.pdf

SM6033NSG SM6033NSG

SM6033NAFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190Aa, RDS(ON)= 3.6m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG For DC-AC Inverter and UPS Application. Dynamic dv/dt Rating.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6033NA

 9.1. Size:167K  sino
 sm6032nsg.pdf

SM6033NSG SM6033NSG

SM6032NSGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/260Aa, RDS(ON)= 2.4m(max.) @ VGS= 10VS 100% UIS+Rg TestedG Reliable and Rugged Top View of TO-263-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS Uninterruptible Power SupplyS High Speed Powe

 9.2. Size:641K  huashuo
 hsm6032.pdf

SM6033NSG SM6033NSG

HSM6032 Description Product Summary VDS 60 V The HSM6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.5 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. SOP8 Pin Configurat

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History: BS107PT

 

 
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