HFU1N60 - описание и поиск аналогов

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

Oct 2016 HFU1N60F / HFD1N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 1A Excellent Switching Characteristics RDS(on), Typ 6.5 100% Avalanche Tested Qg, Typ 3.7 nC RoHS Compliant HFU1N60F HFD1N60F Symbol TO-251 TO-252 D S S D G G Absolute Maximum Ratings TC=25 unless

Sep 2009 BVDSS = 600 V RDS(on) typ HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD1N60S HFU1N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 3.0 nC (T

Jan. 2022 HFU1N60SA / HFD1N60SA 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 600 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 1.0 A Excellent Switching Characteristics RDS(on), Typ 9.3 100% Avalanche Tested Qg, Typ 3.9 nC RoHS Compliant HFU1N60SA HFD1N60SA Symbol TO-