Справочник MOSFET. AOB482

 

AOB482 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOB482
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 105 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 458 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0069 Ohm
   Тип корпуса: TO263

 Аналог (замена) для AOB482

 

 

AOB482 Datasheet (PDF)

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 aob482.pdf

AOB482 AOB482

AOT482L/AOB482L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT482L/AOB482L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

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 aob482l.pdf

AOB482 AOB482

AOT482L/AOB482L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT482L/AOB482L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

 0.2. Size:255K  inchange semiconductor
 aob482l.pdf

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isc N-Channel MOSFET Transistor AOB482LFEATURESDrain Current I =105A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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 aob480l.pdf

AOB482 AOB482

AOT480L/AOB480L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT480L & AOB480L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 180Agate charge & low Qrr. The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.2. Size:253K  inchange semiconductor
 aob480l.pdf

AOB482 AOB482

isc N-Channel MOSFET Transistor AOB480LFEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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