AOB482 Datasheet. Specs and Replacement

Type Designator: AOB482  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 458 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm

Package: TO263

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AOB482 datasheet

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AOB482

AOT482L/AOB482L 80V N-Channel MOSFET TM SDMOS General Description Product Summary 80V The AOT482L/AOB482L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D ... See More ⇒

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AOB482

AOT482L/AOB482L 80V N-Channel MOSFET TM SDMOS General Description Product Summary 80V The AOT482L/AOB482L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D ... See More ⇒

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AOB482

isc N-Channel MOSFET Transistor AOB482L FEATURES Drain Current I =105A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R = 6.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

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AOB482

AOT480L/AOB480L 80V N-Channel MOSFET TM SDMOS General Description Product Summary 80V The AOT480L & AOB480L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 180A gate charge & low Qrr. The result is outstanding efficiency RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOB12N50L, AOB15S60L, AOB15S65L, AOB20S60L, AOB25S65L, AOB270L, AOB27S60L, AOB418, 7N60, AOB4S60L, AOB7S60L, AOB7S65L, AOD4100, AOD4104, AOD4106, AOD4110, AOD4112

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