AOB482 Datasheet and Replacement
Type Designator: AOB482
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 105 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 458 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm
Package: TO263
AOB482 substitution
AOB482 Datasheet (PDF)
aob482.pdf
AOT482L/AOB482L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT482L/AOB482L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
aob482l.pdf
AOT482L/AOB482L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT482L/AOB482L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
aob482l.pdf
isc N-Channel MOSFET Transistor AOB482LFEATURESDrain Current I =105A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aob480l.pdf
AOT480L/AOB480L80V N-Channel MOSFETTMSDMOSGeneral Description Product Summary80VThe AOT480L & AOB480L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 180Agate charge & low Qrr. The result is outstanding efficiency RDS(ON) (at VGS=10V)
Datasheet: AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AOB25S65L , AOB270L , AOB27S60L , AOB418 , IRF830 , AOB4S60L , AOB7S60L , AOB7S65L , AOD4100 , AOD4104 , AOD4106 , AOD4110 , AOD4112 .
Keywords - AOB482 MOSFET datasheet
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