IRF840A
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF840A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 134
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 8
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 38(max)
nC
trⓘ -
Время нарастания: 23
ns
Cossⓘ - Выходная емкость: 155
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85
Ohm
Тип корпуса:
TO220
Аналог (замена) для IRF840A
IRF840A
Datasheet (PDF)
..1. Size:185K international rectifier
irf840apbf.pdf 
PD- 94829SMPS MOSFETIRF840APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.85 8.0Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andSDA
..2. Size:199K international rectifier
irf840a.pdf 
PD- 94829SMPS MOSFETIRF840APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.85 8.0Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andSDA
..3. Size:99K st
irf840a.pdf 
IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V
..4. Size:941K samsung
irf840a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
..5. Size:206K vishay
irf840a sihf840a.pdf 
IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura
..6. Size:193K inchange semiconductor
irf840a.pdf 
isc N-Channel Mosfet Transistor IRF840AFEATURESDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM
0.1. Size:673K international rectifier
irf840aspbf irf840alpbf.pdf 
PD- 95143IRF840ASPbFSMPS MOSFET IRF840ALPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85 8.0A High Speed Power Switching Lead-FreeBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andD
0.2. Size:206K vishay
irf840as sihf840as irf840al sihf840al.pdf 
IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa
0.3. Size:199K vishay
irf840alpbf irf840aspbf sihf840al sihf840as.pdf 
IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa
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