IRF840A Datasheet and Replacement
Type Designator: IRF840A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 134 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 38(max) nC
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220
IRF840A substitution
IRF840A Datasheet (PDF)
irf840apbf.pdf

PD- 94829SMPS MOSFETIRF840APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.85 8.0Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andSDA
irf840a.pdf

PD- 94829SMPS MOSFETIRF840APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.85 8.0Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andSDA
irf840a.pdf

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V
irf840a.pdf

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
Datasheet: IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 , IRF840 , 2SK2209-01R , IRF830 , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 , IRF843 , IRF9130 .
Keywords - IRF840A MOSFET datasheet
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