Аналог (замена) для 2SK1717

2SK1717 Datasheet (PDF)

1.1. 2sk1717.pdf Size:75K _update



4.1. 2sk1719.pdf Size:191K _update

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 5.1. 2sk1776 2sk1778.pdf Size:78K _update



5.2. 2sk1793-z.pdf Size:385K _update



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 5.5. 2sk1767.pdf Size:268K _update

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5.6. 2sk1722.pdf Size:94K _update



5.7. 2sk1720.pdf Size:94K _update



5.8. 2sk17.pdf Size:150K _update

Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = – 1.0 µA – 20 – 50 – 30 – 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( )

5.9. 2sk1746.pdf Size:1047K _update

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5.10. 2sk1739.pdf Size:126K _update



5.11. 2sk1748-z.pdf Size:316K _update



5.12. 2sk1769.pdf Size:110K _update

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5.13. 2sk1721.pdf Size:136K _update



5.14. 2sk1792.pdf Size:69K _update



5.15. 2sk1766.pdf Size:39K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1766 DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Fast Switching Speed APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS

5.16. 2sk1768.pdf Size:217K _update

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5.17. 2sk1771.pdf Size:305K _toshiba

2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications Unit: mm • Superior inter modulation performance. • Low noise figure: NF = 1.0dB (typ.) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate-source voltage VGS ±8 V Drain current ID 30 mA Drain power

5.18. 2sk1745.pdf Size:60K _toshiba



5.19. 2sk170.pdf Size:318K _toshiba

2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = -40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)

5.20. 2sk1739a.pdf Size:197K _toshiba

2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po ? 90 W (Min.) Drain Efficiency : ? = 50% (Typ.) D Frequency : f = 770 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 80 V Gate-Source V

5.21. 2sk1723.pdf Size:41K _toshiba2



5.22. 2sk1737.pdf Size:90K _sanyo

Ordering number:EN3832 N-Channel Silicon MOSFET 2SK1737 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2085A � Low-voltage drive. [2SK1737] 4.5 � Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 � Meets radial taping. 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP

5.23. 2sk1732.pdf Size:86K _sanyo

Ordering number:EN3827 N-Channel Silicon MOSFET 2SK1732 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2085A � Low-voltage drive. [2SK1732] 4.5 � Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 � Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP

5.24. 2sk1736.pdf Size:92K _sanyo

Ordering number:EN3831 N-Channel Silicon MOSFET 2SK1736 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2087A � Low-voltage drive. [2SK1736] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter

5.25. 2sk1727.pdf Size:86K _sanyo

Ordering number:EN3822 N-Channel Silicon MOSFET 2SK1727 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2087A � Low-voltage drive. [2SK1727] 2.5 � Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Rating

5.26. 2sk1730.pdf Size:97K _sanyo

Ordering number:EN3825 N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2087A � Low-voltage drive. [2SK1730] 2.5 � Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Rating

5.27. 2sk1725.pdf Size:85K _sanyo

Ordering number:EN3820 N-Channel Silicon MOSFET 2SK1725 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2087A � Low-voltage drive. [2SK1725] 2.5 � Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Rating

5.28. 2sk1729.pdf Size:82K _sanyo

Ordering number:EN3824 N-Channel Silicon MOSFET 2SK1729 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2087A � Low-voltage drive. [2SK1729] 2.5 � Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Rating

5.29. 2sk1738.pdf Size:88K _sanyo

Ordering number:EN3833 N-Channel Silicon MOSFET 2SK1738 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2085A � Low-voltage drive. [2SK1738] 4.5 � Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 � Meets radial taping. 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP

5.30. 2sk1733.pdf Size:91K _sanyo

Ordering number:EN3828 N-Channel Silicon MOSFET 2SK1733 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2087A � Low-voltage drive. [2SK1733] 2.5 � Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Rating

5.31. 2sk1724.pdf Size:91K _sanyo

Ordering number:EN3819 N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2062A � Low-voltage drive. [2SK1724] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbo

5.32. 2sk1747.pdf Size:183K _sanyo

5.33. 2sk1735.pdf Size:87K _sanyo

Ordering number:EN3830 N-Channel Silicon MOSFET 2SK1735 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2085A � Low-voltage drive. [2SK1735] 4.5 � Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 � Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP

5.34. 2sk1734.pdf Size:87K _sanyo

Ordering number:EN3829 N-Channel Silicon MOSFET 2SK1734 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2085A � Low-voltage drive. [2SK1734] 4.5 � Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 � Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP

5.35. 2sk1740.pdf Size:172K _sanyo

Ordering number:EN4112 N-Channel Junction Silicon FET 2SK1740 HF amplifiers low frequency amplifiers analog switches Features Package Dimensions � Adoption of FBET process. unit:mm � Large?yfs?. 2050A � Small Ciss. [2SK1740] � Small-sized package permitting 2SK1740-applied 0.4 0.16 sets to be made small and slim. 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Source 2 : Drain 3 :

5.36. 2sk1731.pdf Size:90K _sanyo

Ordering number:EN3826 N-Channel Silicon MOSFET 2SK1731 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2085A � Low-voltage drive. [2SK1731] 4.5 � Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 � Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP

5.37. 2sk1728.pdf Size:119K _sanyo

Ordering number:EN3823 N-Channel Silicon MOSFET 2SK1728 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2062A � Low-voltage drive. [2SK1728] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symb

5.38. 2sk1762.pdf Size:79K _renesas

2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 (Previous: ADE-208-1316) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate

5.39. 2sk1773.pdf Size:81K _renesas

2SK1773 Silicon N Channel MOS FET REJ03G0972-0200 (Previous: ADE-208-1319) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2.

5.40. rej03g0968 2sk1761ds.pdf Size:92K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.41. rej03g0973 2sk1775ds.pdf Size:95K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.42. rej03g0970 2sk1764ds.pdf Size:89K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.43. 2sk1775.pdf Size:82K _renesas

2SK1775 Silicon N Channel MOS FET REJ03G0973-0200 (Previous: ADE-208-1320) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate G 2

5.44. rej03g0969 2sk1762ds.pdf Size:92K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.45. 2sk1764.pdf Size:75K _renesas

2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 (Previous: ADE-208-1317) Rev.2.00 Sep 07, 2005 Application � Low frequency amplifier � High speed switching Features � Low on-resistance � High speed switching � 4 V Gate drive device can be driven from 5 V source � Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PLZZ0004CA-A (Package n

5.46. 2sk1772.pdf Size:43K _hitachi

2SK1772 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SK1772 Absolute Ma

5.47. 2sk1761.pdf Size:45K _hitachi

2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switchingregulator, DC-DC converter Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Drain to source vo

5.48. 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf Size:53K _interfet

Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = – 1.0 µA – 20 – 50 – 30 – 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( )

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