2SK1717
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1717
Marking Code: Z5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.1
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 85
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053
Ohm
Package:
TO220IS
2SK1717
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1717
Datasheet (PDF)
..2. Size:851K cn vbsemi
2sk1717.pdf
2SK1717www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no
8.1. Size:33K 1
2sk1712.pdf
2SK1712External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 10 V I 500 nA V = 10VGSS GSS GSI 15 A I 250 A V = 60V, V = 0VD DSS DS GSI V 1.0 2.0 V V = 10V, I = 250AD (pulse) 60 (Tch 150
8.2. Size:191K toshiba
2sk1719.pdf
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8.3. Size:209K inchange semiconductor
2sk1710.pdf
isc N-Channel MOSFET Transistor 2SK1710DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
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