INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1879 DESCRIPTION Drain Current ID=45A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage 30 V I

2SK1875 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High |Yfs|: |Yfs| = 25 mS (typ.) Low C : C = 7.5 pF (typ.) iss issMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitGate-drain voltage

isc N-Channel MOSFET Transistor 2SK1876DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSFast Switching SpeedLow on-resistanceFor switchinggregulator,DC-DC ConverterMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)a