2SJ409S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ409S
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 115 ns
Cossⓘ - Выходная емкость: 680 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: TO263
2SJ409S Datasheet (PDF)
2sj409l-s.pdf
2SJ409(L), 2SJ409(S)Silicon P-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converterOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SJ409(L), 2SJ409(S)
2sj402.pdf
2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 29 m (typ.) DS (ON) High forward transfer admittance : |Y | = 23 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode
2sj407.pdf
2SJ407 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ407 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = -100 A (max) (V = -200 V) DSS DS Enhancement-mode : Vth = -1.5~-3.
2sj401.pdf
2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ401 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 33 m (typ.) DS (ON) High forward transfer admittance : |Y | = 20 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode
2sj400.pdf
Ordering number:ENN6422P-Channel Silicon MOSFET2SJ400Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A 4V drive.[2SJ400] Enables simplified fabrication, high-density mount-4.510.21.3ing, and miniaturization in end products due to thesurface mountable package.1.20.80.41 2
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918