2SJ409S Datasheet. Specs and Replacement

Type Designator: 2SJ409S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO263

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2SJ409S substitution

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2SJ409S datasheet

 8.1. Size:27K  hitachi
 2sj409l-s.pdf pdf_icon

2SJ409S

2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SJ409(L), 2SJ409(S) ... See More ⇒

 9.1. Size:420K  toshiba
 2sj402.pdf pdf_icon

2SJ409S

2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 29 m (typ.) DS (ON) High forward transfer admittance Y = 23 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode... See More ⇒

 9.2. Size:397K  toshiba
 2sj407.pdf pdf_icon

2SJ409S

2SJ407 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ407 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = -100 A (max) (V = -200 V) DSS DS Enhancement-mode Vth = -1.5 -3.... See More ⇒

 9.3. Size:420K  toshiba
 2sj401.pdf pdf_icon

2SJ409S

2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ401 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 33 m (typ.) DS (ON) High forward transfer admittance Y = 20 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode... See More ⇒

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Detailed specifications: 2SJ332S, 2SJ355, 2SJ357, 2SJ358, 2SJ358C, 2SJ389L, 2SJ389S, 2SJ409L, AO4407, 2SJ461A, 2SJ475-01, 2SJ476-01L, 2SJ476-01S, 2SJ477-01MR, AO3451, AO3452, AO3453

Keywords - 2SJ409S MOSFET specs

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