AOW2502 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOW2502
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 277 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5.1 V
Максимально допустимый постоянный ток стока |Id|: 106 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 75 ns
Выходная емкость (Cd): 345 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0107 Ohm
Тип корпуса: TO262
AOW2502 Datasheet (PDF)
aow2502.pdf
AOW2502150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)
aow2502.pdf
isc N-Channel MOSFET Transistor AOW2502FEATURESDrain Current I = 106A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aow2500.pdf
AOW2500150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW2500 uses Trench MOSFET technology that is 150V ID (at VGS=10V) 152Auniquely optimized to provide the most efficient high RDS(ON) (at VGS=10V)
aow2500.pdf
isc N-Channel MOSFET Transistor AOW2500FEATURESDrain Current I = 152A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aow25s65.pdf
AOW25S65/AOWF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW25S65 & AOWF25S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 104Adesigned to deliver high levels of performance and RDS(ON),max 0.19robustness in switching applications. Qg,typ 26.4nCBy providing low RDS(on), Qg
aow25s65.pdf
isc N-Channel MOSFET Transistor AOW25S65FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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