AOW2502 Datasheet and Replacement
Type Designator: AOW2502
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 277 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 106 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO262
AOW2502 Datasheet (PDF)
aow2502.pdf

AOW2502150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)
aow2502.pdf

isc N-Channel MOSFET Transistor AOW2502FEATURESDrain Current I = 106A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aow2500.pdf

AOW2500150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW2500 uses Trench MOSFET technology that is 150V ID (at VGS=10V) 152Auniquely optimized to provide the most efficient high RDS(ON) (at VGS=10V)
aow2500.pdf

isc N-Channel MOSFET Transistor AOW2500FEATURESDrain Current I = 152A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: AOTF20C60P , AOTF2142L , AOTF2146L , AOTF2210L , AOTF286L , AOTF290L , AOTF292L , AOTF296L , IRF730 , AOW290 , AOW292 , AOW296 , AOWF296 , AOWF190A60 , AOY2610E , AP92T12GP , AP95T10GP .
History: AO6804 | IRFZ42 | IRF7464
Keywords - AOW2502 MOSFET datasheet
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History: AO6804 | IRFZ42 | IRF7464



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