Справочник MOSFET. AP9938GEM

 

AP9938GEM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9938GEM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.5 A
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: SO8

 Аналог (замена) для AP9938GEM

 

 

AP9938GEM Datasheet (PDF)

 ..1. Size:170K  ape
 ap9938gem.pdf

AP9938GEM AP9938GEM

AP9938GEM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series a

 0.1. Size:73K  ape
 ap9938gem-hf.pdf

AP9938GEM AP9938GEM

AP9938GEM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series are from Advanced Power innovated design andD1 D2silicon pr

 6.1. Size:177K  ape
 ap9938gey.pdf

AP9938GEM AP9938GEM

AP9938GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev

 6.2. Size:144K  ape
 ap9938geo.pdf

AP9938GEM AP9938GEM

AP9938GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2S2 Low on-resistance S2 BVDSS 20VD2 Capable of 1.8V Gate Drive G1 RDS(ON) 18mS1S1TSSOP-8D1 Optimal DC/DC Battery Application ID3 6A Halogen Free & RoHS Compliant ProductDescriptionD1 D2Advanced Power MOSFETs from APEC provide the designer

 6.3. Size:71K  ape
 ap9938geyt-hf.pdf

AP9938GEM AP9938GEM

AP9938GEYT-HFHalogen-Free ProductAdvanced Power DUAL N CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1/D2 Capable of 1.8V Gate Drive BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID 10AS1 RoHS Compliant & Halogen-FreeG1S2D1/D2G2Description PMPAK 3x3G1 G2AP9938 series are from Advanced Power innovated design and

 6.4. Size:97K  ape
 ap9938gey-hf.pdf

AP9938GEM AP9938GEM

AP9938GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev

 6.5. Size:73K  ape
 ap9938geo-hf.pdf

AP9938GEM AP9938GEM

AP9938GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2S2 Low on-resistance S2 BVDSS 20VD2 Capable of 1.8V Gate Drive G1 RDS(ON) 18mS1S1TSSOP-8D1 Optimal DC/DC Battery Application ID 6A Halogen Free & RoHS Compliant ProductDescriptionD1 D2Advanced Power MOSFETs from APEC provide the designer

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