IRFIZ34E - описание и поиск аналогов

 ..1. Size:114K  international rectifier
 irfiz34e.pdf 

PD - 9.1674A IRFIZ34E HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.042 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 7.1. Size:291K  1
 irfiz34a irfw34a.pdf 

 7.2. Size:291K  1
 irfwz34a irfiz34a.pdf 

 7.3. Size:2985K  international rectifier
 irfiz34g irfiz34gpbf.pdf 

IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T

 7.4. Size:1301K  international rectifier
 irfiz34gpbf.pdf 

PD - 94861 IRFIZ34GPbF Lead-Free 12/03/03 Document Number 91188 www.vishay.com 1 IRFIZ34GPbF Document Number 91188 www.vishay.com 2 IRFIZ34GPbF Document Number 91188 www.vishay.com 3 IRFIZ34GPbF Document Number 91188 www.vishay.com 4 IRFIZ34GPbF Document Number 91188 www.vishay.com 5 IRFIZ34GPbF Document Number 91188 www.vishay.com 6 IRFIZ34GPbF TO-220 Full

 7.5. Size:217K  international rectifier
 auirfiz34n.pdf 

PD - 97778 AUTOMOTIVE GRADE AUIRFIZ34N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package RDS(on) max. 40m l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Distantce = 4.8mm ID 21A l 175 C Operating Temperature l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description Spe

 7.6. Size:105K  international rectifier
 irfiz34n.pdf 

PD - 9.1489A IRFIZ34N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 Fully Avalanche Rated G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

 7.7. Size:105K  international rectifier
 irfiz34v.pdf 

PD - 94053 IRFIZ34V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m G Fast Switching Fully Avalanche Rated ID = 20A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ac

 7.8. Size:273K  international rectifier
 irfiz34g.pdf 

 7.9. Size:265K  international rectifier
 irfiz34npbf.pdf 

PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.04 l Fully Avalanche Rated G l Lead-Free ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

 7.10. Size:2984K  vishay
 irfiz34g sihfiz34g.pdf 

IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.050 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 46 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 22 Low T

 7.11. Size:504K  infineon
 irfiz34npbf.pdf 

IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 7.12. Size:200K  inchange semiconductor
 irfiz34n.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIZ34N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

 7.13. Size:275K  inchange semiconductor
 irfiz34g.pdf 

iscN-Channel MOSFET Transistor IRFIZ34G FEATURES Low drain-source on-resistance RDS(ON) 50m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE