IRFIZ34E MOSFET. Datasheet pdf. Equivalent

PD - 9.1674AIRFIZ34EHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 60V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.042 Fully Avalanche RatedGID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

IRFIZ34G, SiHFIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.050f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 46 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 22 Low T

PD - 94861IRFIZ34GPbF Lead-Free12/03/03Document Number: 91188 www.vishay.com1IRFIZ34GPbFDocument Number: 91188 www.vishay.com2IRFIZ34GPbFDocument Number: 91188 www.vishay.com3IRFIZ34GPbFDocument Number: 91188 www.vishay.com4IRFIZ34GPbFDocument Number: 91188 www.vishay.com5IRFIZ34GPbFDocument Number: 91188 www.vishay.com6IRFIZ34GPbFTO-220 Full

PD - 97778AUTOMOTIVE GRADEAUIRFIZ34NFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance V(BR)DSS 55Vl Isolated PackageRDS(on) max. 40ml High Voltage Isolation = 2.5KVRMSl Sink to Lead Creepage Distantce = 4.8mmID 21Al 175C Operating Temperaturel Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Automotive Qualified*DescriptionSpe

PD - 9.1489AIRFIZ34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.04 Fully Avalanche RatedGID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per s

PD - 94053IRFIZ34VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28mG Fast Switching Fully Avalanche RatedID = 20A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

PD - 94840IRFIZ34NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.04l Fully Avalanche RatedGl Lead-FreeID = 21ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

IRFIZ34G, SiHFIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.050f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 46 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 22 Low T

IRFIZ34NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.04 Fully Avalanche Rated Lead-Free ID 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIZ34NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

iscN-Channel MOSFET Transistor IRFIZ34GFEATURESLow drain-source on-resistance:RDS(ON) 50m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE