IRLZ44ZPBF - Даташиты. Аналоги. Основные параметры

PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi

PD - 95539AIRLZ44ZPbFIRLZ44ZSPbFIRLZ44ZLPbFFeatures Logic Level HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 13.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 51ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achi

PD - 97682AUTOMOTIVE GRADEAUIRLZ44ZFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS55V 175C Operating Temperature Fast SwitchingRDS(on) typ.11mG Repetitive Avalanche Allowed up to max. 13.5mTjmaxS Lead-Free, RoHS CompliantID 51A Automotive Qualified *DescriptionDSpecifically

Isc N-Channel MOSFET Transistor IRLZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ44ZIIRLZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM