Справочник MOSFET. IRFR8314PBF

 

IRFR8314PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFR8314PBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 125 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.2 V

Максимально допустимый постоянный ток стока (Id): 90 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 98 ns

Выходная емкость (Cd): 908 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0022 Ohm

Тип корпуса: TO252

Аналог (замена) для IRFR8314PBF

 

 

IRFR8314PBF Datasheet (PDF)

1.1. irfr8314pbf.pdf Size:543K _international_rectifier

IRFR8314PBF
IRFR8314PBF

IRFR8314PbF HEXFET® Power MOSFET Application VDSS 30 V D Optimized for UPS/Inverter Applications RDS(on) max Low Voltage Power Tools 2.2 (@ VGS = 10V) m G (@ VGS = 4.5V) 3.1 S Qg (typical) 40 nC Benefits ID (Silicon Limited) 179 Fully Characterized Avalanche Voltage and Current A ID (Package Limited) 90A Lead-Free, RoHS Co

2.1. irfr8314.pdf Size:242K _inchange_semiconductor

IRFR8314PBF
IRFR8314PBF

isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for UPS/Inverter Applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 5.1. irfr825trpbf.pdf Size:207K _international_rectifier

IRFR8314PBF
IRFR8314PBF

PD - 96433A IRFR825TRPbF HEXFET® Power MOSFET Applications Trr typ. VDSS RDS(on) typ. ID • Zero Voltage Switching SMPS • Uninterruptible Power Supplies 500V 1.05Ω 92ns 6.0A • Motor Control applications D Features and Benefits • Fast body diode eliminates the need for external S diodes in ZVS applications. G • Lower Gate charge results in simpler drive requirements.

5.2. irfr812trpbf.pdf Size:219K _international_rectifier

IRFR8314PBF
IRFR8314PBF

PD -97773 IRFR812TRPbF HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID • Uninterruptible Power Supplies 500V 1.85Ω 75ns 3.6A • Motor Control applications D Features and Benefits • Fast body diode eliminates the need for external S diodes in ZVS applications. G • Lower Gate charge results in simpler drive requirements.

 5.3. auirfr8401 auirfu8401.pdf Size:453K _international_rectifier

IRFR8314PBF
IRFR8314PBF

AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET® Power MOSFET Features VDSS 40V D  Advanced Process Technology  New Ultra Low On-Resistance RDS(on) typ. 3.2m 175°C Operating Temperature 4.25m G max  Fast Switching ID (Silicon Limited) 100A  Repetitive Avalanche Allowed up to Tjmax S  Lead-Free, RoHS Compliant ID

5.4. auirfr8405 auirfu8405.pdf Size:292K _international_rectifier

IRFR8314PBF
IRFR8314PBF

AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features HEXFET® Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) typ. 1.65mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 1.98mΩ l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Silicon Limited) 211A Description Specifically designed for A

 5.5. auirfr8403 auirfu8403.pdf Size:279K _international_rectifier

IRFR8314PBF
IRFR8314PBF

AUIRFR8403 AUIRFU8403 AUTOMOTIVE GRADE Features HEXFET® Power MOSFET l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 2.4m Ω l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 3.1m Ω G l Lead-Free, RoHS Compliant ID (Silicon Limited) 127A l Automotive Qualified * Description S ID (Package L

5.6. irfr812.pdf Size:242K _inchange_semiconductor

IRFR8314PBF
IRFR8314PBF

isc N-Channel MOSFET Transistor IRFR812, IIRFR812 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500

5.7. irfr825tr.pdf Size:241K _inchange_semiconductor

IRFR8314PBF
IRFR8314PBF

isc N-Channel MOSFET Transistor IRFR825TR,IIRFR825TR ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 5

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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