IRFIB5N65APBF - параметры транзистора MOSFET, его аналоги, datasheet

IRFIB5N65APBF Datasheet (PDF)

..1. Size:235K international rectifier
irfib5n65apbf.pdf pdf_icon

PD-94837SMPS MOSFETIRFIB5N65APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 650V 0.93 5.1Al High Speed Power Switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt RuggednessG D S

4.1. Size:103K international rectifier
irfib5n65a.pdf pdf_icon

PD-91816BSMPS MOSFETIRFIB5N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacita

4.2. Size:141K vishay
irfib5n65a sihfib5n65a.pdf pdf_icon

IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19

4.3. Size:274K inchange semiconductor
irfib5n65a.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFIB5N65AFEATURESLow drain-source on-resistance:RDS(ON) =0.93 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

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