All MOSFET. IRFIB5N65APBF Datasheet

 

IRFIB5N65APBF Datasheet and Replacement


   Type Designator: IRFIB5N65APBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 48 nC
   tr ⓘ - Rise Time: 20 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.93 Ohm
   Package: TO220F
 
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IRFIB5N65APBF Datasheet (PDF)

 ..1. Size:235K  international rectifier
irfib5n65apbf.pdf pdf_icon

IRFIB5N65APBF

PD-94837SMPS MOSFETIRFIB5N65APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 650V 0.93 5.1Al High Speed Power Switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt RuggednessG D S

 4.1. Size:103K  international rectifier
irfib5n65a.pdf pdf_icon

IRFIB5N65APBF

PD-91816BSMPS MOSFETIRFIB5N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacita

 4.2. Size:141K  vishay
irfib5n65a sihfib5n65a.pdf pdf_icon

IRFIB5N65APBF

IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19

 4.3. Size:274K  inchange semiconductor
irfib5n65a.pdf pdf_icon

IRFIB5N65APBF

iscN-Channel MOSFET Transistor IRFIB5N65AFEATURESLow drain-source on-resistance:RDS(ON) =0.93 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: IRFI9Z14G , IRFI9Z14GPBF , IRFI9Z24G , IRFI9Z24GPBF , IRFI9Z34G , IRFI9Z34GPBF , IRFIB41N15DPBF , IRFIB5N50LPBF , 7N60 , IRFIB6N60APBF , IRFIB7N50APBF , IRFIB7N50LPBF , IRFIB8N50K , IRFIBC30GPBF , IRL8113LPBF , IRL8113SPBF , IRL8114PBF .

Keywords - IRFIB5N65APBF MOSFET datasheet

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