IRFIB5N65APBF Datasheet. Specs and Replacement

Type Designator: IRFIB5N65APBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.93 Ohm

Package: TO220F

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IRFIB5N65APBF datasheet

 ..1. Size:235K  international rectifier
irfib5n65apbf.pdf pdf_icon

IRFIB5N65APBF

PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 650V 0.93 5.1A l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness G D S ... See More ⇒

 4.1. Size:103K  international rectifier
irfib5n65a.pdf pdf_icon

IRFIB5N65APBF

PD-91816B SMPS MOSFET IRFIB5N65A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacita... See More ⇒

 4.2. Size:141K  vishay
irfib5n65a sihfib5n65a.pdf pdf_icon

IRFIB5N65APBF

IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 0.93 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 ... See More ⇒

 4.3. Size:274K  inchange semiconductor
irfib5n65a.pdf pdf_icon

IRFIB5N65APBF

iscN-Channel MOSFET Transistor IRFIB5N65A FEATURES Low drain-source on-resistance RDS(ON) =0.93 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

Detailed specifications: IRFI9Z14G, IRFI9Z14GPBF, IRFI9Z24G, IRFI9Z24GPBF, IRFI9Z34G, IRFI9Z34GPBF, IRFIB41N15DPBF, IRFIB5N50LPBF, 4N60, IRFIB6N60APBF, IRFIB7N50APBF, IRFIB7N50LPBF, IRFIB8N50K, IRFIBC30GPBF, IRL8113LPBF, IRL8113SPBF, IRL8114PBF

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