IRL640PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL640PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 17 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 66 nC
Время нарастания (tr): 83 ns
Выходная емкость (Cd): 400 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.18 Ohm
Тип корпуса: TO220AB
IRL640PBF Datasheet (PDF)
irl640pbf.pdf
PD - 94964IRL640PbF Lead-Free01/30/04Document Number: 91305 www.vishay.com1IRL640PbFDocument Number: 91305 www.vishay.com2IRL640PbFDocument Number: 91305 www.vishay.com3IRL640PbFDocument Number: 91305 www.vishay.com4IRL640PbFDocument Number: 91305 www.vishay.com5IRL640PbFDocument Number: 91305 www.vishay.com6IRL640PbFDocument Number: 91305 ww
irl640pbf sihl640.pdf
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
irl640spbf.pdf
PD- 95585IRL640SPbF Lead-Free07/20/04Document Number: 91306 www.vishay.com1IRL640SPbFDocument Number: 91306 www.vishay.com2IRL640SPbFDocument Number: 91306 www.vishay.com3IRL640SPbFDocument Number: 91306 www.vishay.com4IRL640SPbFDocument Number: 91306 www.vishay.com5IRL640SPbFDocument Number: 91306 www.vishay.com6IRL640SPbFPeak Diode Recovery
irl640a.pdf
IRL640AFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxim
irl640a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin
irl640s sihl640s.pdf
IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a
irl640 sihl640.pdf
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
irl640a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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