Справочник MOSFET. IRHM57260SE

 

IRHM57260SE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRHM57260SE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 125 ns
   Cossⓘ - Выходная емкость: 885 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.049 Ohm
   Тип корпуса: TO254AA

 Аналог (замена) для IRHM57260SE

 

 

IRHM57260SE Datasheet (PDF)

 ..1. Size:181K  international rectifier
 irhm57260se.pdf

IRHM57260SE IRHM57260SE

PD - 93880CRADIATION HARDENED IRHM57260SEPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-254AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57260SE 100K Rads (Si) 0.049 35A* TO-254AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for spacen Single Event Effect (SEE) Hardenedapplications. T

 5.1. Size:111K  international rectifier
 irhm57260.pdf

IRHM57260SE IRHM57260SE

PD - 91862DRADIATION HARDENED IRHM57260POWER MOSFET 200V, N-CHANNELTECHNOLOGY44THRU-HOLE (TO-254AA) #cProduct Summary Part Number Radiation Level RDS(on) ID IRHM57260 100K Rads (Si) 0.049 35A* IRHM53260 300K Rads (Si) 0.049 35A* IRHM54260 600K Rads (Si) 0.049 35A* IRHM58260 1000K Rads (Si) 0.050 35A*TO-254AAFeatures:International Rectifiers R5TM

 6.1. Size:166K  international rectifier
 irhm57264se.pdf

IRHM57260SE IRHM57260SE

PD-93798BRADIATION HARDENED IRHM57264SEPOWER MOSFET250V, N-CHANNELTHRU-HOLE (TO-254AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57264SE 100K Rads (Si) 0.066 35A* TO-254International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for spacen Low RDS(on)applications. These devices have been char

 8.1. Size:171K  international rectifier
 irhm57064.pdf

IRHM57260SE IRHM57260SE

PD-93792ERADIATION HARDENED IRHM57064POWER MOSFET60V, N-CHANNELTECHNOLOGYTHRU-HOLE (TO-254AA)55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57064 100K Rads (Si) 0.012 35A* IRHM53064 300K Rads (Si) 0.012 35A* IRHM54064 600K Rads (Si) 0.012 35A* IRHM58064 1000K Rads (Si) 0.013 35A*TO-254AAInternational Rectifiers R5TM technology

 8.2. Size:119K  international rectifier
 irhm57z60.pdf

IRHM57260SE IRHM57260SE

PD - 93786BRADIATION HARDENED IRHM57Z60POWER MOSFET30V, N-CHANNELTHRU-HOLE (TO-254AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHM57Z60 100K Rads (Si) 0.0095 35A* IRHM53Z60 300K Rads (Si) 0.0095 35A* IRHM54Z60 600K Rads (Si) 0.0095 35A* IRHM58Z60 1000K Rads (Si) 0.010 35A* TO-254AAFeatures:International Rectifiers R

 8.3. Size:158K  international rectifier
 irhm57160.pdf

IRHM57260SE IRHM57260SE

PD-93784GRADIATION HARDENED IRHM57160POWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-254AA)TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57160 100K Rads (Si) 0.018 35A* IRHM53160 300K Rads (Si) 0.018 35A* IRHM54160 600K Rads (Si) 0.018 35A* IRHM58160 1000K Rads (Si) 0.019 35A*TO-254AAFeatures:International Rectifiers R5T

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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