IRHM57260SE - параметры транзистора MOSFET, его аналоги, datasheet

IRHM57260SE Datasheet (PDF)

..1. Size:181K international rectifier
irhm57260se.pdf pdf_icon

PD - 93880CRADIATION HARDENED IRHM57260SEPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-254AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57260SE 100K Rads (Si) 0.049 35A* TO-254AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for spacen Single Event Effect (SEE) Hardenedapplications. T

5.1. Size:111K international rectifier
irhm57260.pdf pdf_icon

PD - 91862DRADIATION HARDENED IRHM57260POWER MOSFET 200V, N-CHANNELTECHNOLOGY44THRU-HOLE (TO-254AA) #cProduct Summary Part Number Radiation Level RDS(on) ID IRHM57260 100K Rads (Si) 0.049 35A* IRHM53260 300K Rads (Si) 0.049 35A* IRHM54260 600K Rads (Si) 0.049 35A* IRHM58260 1000K Rads (Si) 0.050 35A*TO-254AAFeatures:International Rectifiers R5TM

6.1. Size:166K international rectifier
irhm57264se.pdf pdf_icon

PD-93798BRADIATION HARDENED IRHM57264SEPOWER MOSFET250V, N-CHANNELTHRU-HOLE (TO-254AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57264SE 100K Rads (Si) 0.066 35A* TO-254International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for spacen Low RDS(on)applications. These devices have been char

8.1. Size:171K international rectifier
irhm57064.pdf pdf_icon

PD-93792ERADIATION HARDENED IRHM57064POWER MOSFET60V, N-CHANNELTECHNOLOGYTHRU-HOLE (TO-254AA)55 Product Summary Part Number Radiation Level RDS(on) ID IRHM57064 100K Rads (Si) 0.012 35A* IRHM53064 300K Rads (Si) 0.012 35A* IRHM54064 600K Rads (Si) 0.012 35A* IRHM58064 1000K Rads (Si) 0.013 35A*TO-254AAInternational Rectifiers R5TM technology