IRFB7434 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFB7434
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 294 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.9 V
Максимально допустимый постоянный ток стока |Id|: 317 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 216 nC
Время нарастания (tr): 68 ns
Выходная емкость (Cd): 1540 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0016 Ohm
Тип корпуса: TO220AB
IRFB7434 Datasheet (PDF)
irfb7434.pdf
StrongIRFETIRFB7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applicationsID (Silicon Limited) 317Al Resonant mode power suppliesSID (Package Limited) 195A l OR-ing and
irfb7434pbf.pdf
StrongIRFET IRFB7434PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 1.25mBattery powered circuits max 1.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 317A Resonant mode power sup
irfb7434.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7434IIRFB7434FEATURESStatic drain-source on-resistance:RDS(on) 1.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
irfb7437.pdf
StrongIRFETIRFB7437PbFHEXFET Power MOSFETApplicationsl Brushed Motor drive applicationsVDSSD 40Vl BLDC Motor drive applicationsRDS(on) typ.1.5m l Battery powered circuitsl Half-bridge and full-bridge topologies max. 2.0m Gl Synchronous rectifier applicationsID (Silicon Limited) 250Al Resonant mode power suppliesSl OR-ing and redundant power switche
irfb7430.pdf
StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (
irfb7437pbf.pdf
StrongIRFETIRFB7437PbFHEXFET Power MOSFETApplicationsl Brushed Motor drive applicationsVDSSD 40Vl BLDC Motor drive applicationsRDS(on) typ.1.5m l Battery powered circuitsl Half-bridge and full-bridge topologies max. 2.0m Gl Synchronous rectifier applicationsID (Silicon Limited) 250Al Resonant mode power suppliesSl OR-ing and redundant power switche
irfb7430pbf.pdf
StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (
irfb7437.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7437IIRFB7437FEATURESStatic drain-source on-resistance:RDS(on) 2.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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