IRFB7434 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFB7434
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 294 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 317 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 216 nC
trⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 1540 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TO220AB
IRFB7434 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFB7434 Datasheet (PDF)
irfb7434.pdf
StrongIRFETIRFB7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applicationsID (Silicon Limited) 317Al Resonant mode power suppliesSID (Package Limited) 195A l OR-ing and
irfb7434pbf.pdf
StrongIRFET IRFB7434PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 1.25mBattery powered circuits max 1.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 317A Resonant mode power sup
irfb7434.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7434IIRFB7434FEATURESStatic drain-source on-resistance:RDS(on) 1.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
irfb7437.pdf
StrongIRFETIRFB7437PbFHEXFET Power MOSFETApplicationsl Brushed Motor drive applicationsVDSSD 40Vl BLDC Motor drive applicationsRDS(on) typ.1.5m l Battery powered circuitsl Half-bridge and full-bridge topologies max. 2.0m Gl Synchronous rectifier applicationsID (Silicon Limited) 250Al Resonant mode power suppliesSl OR-ing and redundant power switche
irfb7430.pdf
StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (
irfb7437pbf.pdf
StrongIRFETIRFB7437PbFHEXFET Power MOSFETApplicationsl Brushed Motor drive applicationsVDSSD 40Vl BLDC Motor drive applicationsRDS(on) typ.1.5m l Battery powered circuitsl Half-bridge and full-bridge topologies max. 2.0m Gl Synchronous rectifier applicationsID (Silicon Limited) 250Al Resonant mode power suppliesSl OR-ing and redundant power switche
irfb7430pbf.pdf
StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (
irfb7437.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7437IIRFB7437FEATURESStatic drain-source on-resistance:RDS(on) 2.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918