IRFP340PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP340PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 400 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 62 nC
Время нарастания (tr): 27 ns
Выходная емкость (Cd): 400 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.55 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP340PBF
IRFP340PBF Datasheet (PDF)
irfp340pbf.pdf
PD- 95712IRFP340PbF Lead-Free8/2/04Document Number: 91222 www.vishay.com1IRFP340PbFDocument Number: 91222 www.vishay.com2IRFP340PbFDocument Number: 91222 www.vishay.com3IRFP340PbFDocument Number: 91222 www.vishay.com4IRFP340PbFDocument Number: 91222 www.vishay.com5IRFP340PbFDocument Number: 91222 www.vishay.com6IRFP340PbFPeak Diode Recovery d
irfp340pbf sihfp340.pdf
IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant
irfp340a.pdf
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irfp340 sihfp340.pdf
IRFP340, SiHFP340Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 62 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant
irfp340r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES Drain Current ID= 11A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.55(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
irfp340a.pdf
isc N-Channel MOSFET Transistor IRFP340AFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
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