IXFR44N50Q3 - параметры транзистора MOSFET, его аналоги, datasheet

IXFR44N50Q3 Datasheet (PDF)

..1. Size:156K ixys
ixfr44n50q3.pdf pdf_icon

Advance Technical InformationHiperFETTM VDSS = 500VIXFR44N50Q3Pwer MOSFET ID25 = 25AQ3-CIass RDS(n) 154m trr 250ns(EIectricaIIy IsIated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432SymbI Test Cnditins Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 VGVGSM Transient 40

5.1. Size:153K ixys
ixfr44n50p.pdf pdf_icon

IXFR 44N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 24 APower MOSFET RDS(on) 150 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel EnhancementAvalanche RatedFast Intrinsic DiodeISOPLUS247 (IXFR)E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25

7.1. Size:34K ixys
ixfr44n60.pdf pdf_icon

HiPerFETTM Power MOSFETsIXFR 44N60 VDSS = 600 VISOPLUS247TMID25 = 38 A(Electrically Isolated Back Surface)RDS(on)= 130 mWSingle MOSFET Dietrr 250 nsISOPLUS 247TMSymbol Test Conditions Maximum Ratings E153432VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C38 AG = Gate D = Drain

7.2. Size:101K ixys
ixfr44n80p.pdf pdf_icon

IXFR 44N80P VDSS = 800 VPolarHVTM HiPerFETID25 = 25 APower MOSFET RDS(on) 200 m Electrically Isolated Tabtrr 250 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 8

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .