IXFH7N100P - параметры транзистора MOSFET, его аналоги, datasheet

IXFH7N100P Datasheet (PDF)

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Polar TM HiPerFETTM VDSS = 1000VIXFA7N100PPower MOSFETs ID25 = 7AIXFP7N100P RDS(on) 1.9 IXFH7N100PN-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Conti

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HiPerFETTM IXFH 7 N80 VDSS = 800 VPower MOSFETs IXFM 7 N80 ID (cont) = 7 ARDS(on) = 1.4 WN-Channel Enhancement Modetrr = 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C7 ATO-204 AA (IXFM

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ixfh7n90q ixft7n90q.pdf pdf_icon

www.DataSheet.co.krAdvanced Technical InformationIXFH 7N90Q VDSS = 900 VHiPerFETTMIXFT 7N90Q ID25 = 7 APower MOSFETsRDS(on) = 1.5 WQ-ClassN-Channel Enhancement Modetrr 250 nsAvalanche Rated, Low Qg, High dv/dtTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM

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