IRFP360LC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP360LC
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 280 W
Предельно допустимое напряжение сток-исток (Uds): 400 V
Предельно допустимое напряжение затвор-исток (Ugs): 10 V
Пороговое напряжение включения Ugs(th): 4 V
Максимально допустимый постоянный ток стока (Id): 23 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 110 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
Тип корпуса: TO3P
IRFP360LC Datasheet (PDF)
1.1. irfp360lc.pdf 
Size:162K _international_rectifier
PD - 9.1230 IRFP360LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20Ω Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional
1.2. irfp360lc sihfp360lc.pdf Size:1031K _vishay
IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 • Reduced Gate Drive Requirement Available RDS(on) (Ω)VGS = 10 V 0.20 • Enhanced 30 V VGS Rating RoHS* COMPLIANT • Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 • Isolated Central Mounting Hole Qgs (nC) 28 • Dynamic dV/dt Rated Qgd (nC) 45 • Repetitive A
3.1. irfp360.pdf Size:153K _international_rectifier
Document Number: 90292 www.vishay.com 1001 www.vishay.com Document Number: 90292 1002 Document Number: 90292 www.vishay.com 1003 Document Number: 90292 www.vishay.com 1004 Document Number: 90292 www.vishay.com 1005 Document Number: 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc.,
3.2. irfp360 irfp362.pdf Size:634K _njs
3.3. irfp360pbf.pdf Size:965K _vishay
IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements • Lead (
3.4. irfp360 sihfp360.pdf Size:995K _vishay
IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 • Ease of Paralleling Qgd (nC) 110 Configuration Single • Simple Drive Requirements • Complia
Другие MOSFET... IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP4332 , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 .
