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Type IPP147N03L GIPB147N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 14.7mDS(on),max Optimized technology for DC/DC convertersI 20 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(

IPB144N12N3 GIPI147N12N3 G IPP147N12N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D R ( 492??6= ?@C>2= =6G6=R 14 7 m - @? >2I R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH

isc N-Channel MOSFET Transistor IPP147N12N3IIPP147N12N3FEATURESStatic drain-source on-resistance:RDS(on) 14.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS