IPL60R180P6. Аналоги и основные параметры

Наименование производителя: IPL60R180P6

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 176 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 22.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7.6 ns

Cossⓘ - Выходная емкость: 89 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: THINPAK8X8

Аналог (замена) для IPL60R180P6

- подборⓘ MOSFET транзистора по параметрам

 

IPL60R180P6 даташит

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IPL60R185C7 MOSFET ThinPAK 8x8 600V CoolMOS C7 Power Transistor CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology eve

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