IPL60R180P6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPL60R180P6
Marking Code: 6R180P6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 22.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 89 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: THINPAK8X8
IPL60R180P6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPL60R180P6 Datasheet (PDF)
ipl60r180p6.pdf
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