IPL60R180P6 PDF and Equivalents Search

 

IPL60R180P6 Specs and Replacement


   Type Designator: IPL60R180P6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 89 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: THINPAK8X8
 

 IPL60R180P6 substitution

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IPL60R180P6 datasheet

 ..1. Size:1634K  infineon
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IPL60R180P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R180P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R180P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

 6.1. Size:1325K  infineon
ipl60r185p7.pdf pdf_icon

IPL60R180P6

IPL60R185P7 MOSFET ThinPAK 8x8 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒

 6.2. Size:1456K  infineon
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IPL60R180P6

IPL60R185C7 MOSFET ThinPAK 8x8 600V CoolMOS C7 Power Transistor CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology eve... See More ⇒

 7.1. Size:1597K  infineon
ipl60r199cp.pdf pdf_icon

IPL60R180P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS CP Power Transistor IPL60R199CP 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely... See More ⇒

Detailed specifications: IPL65R099C7 , IPL65R070C7 , IPL60R650P6S , IPL60R360P6S , IPL60R2K1C6S , IPL60R255P6 , IPL60R210P6 , IPL60R1K5C6S , STF13NM60N , IPI80N06S3-07 , IPI65R420CFD , IPI65R310CFD , IPI65R280E6 , IPI65R190E6 , IPI65R190CFD , IPI65R190C6 , IPI65R150CFD .

History: AGM206A | PK5C1BA | AGM025N10C | AGM1099E | AGM15N10D | NCE4953 | AGM206MDP

Keywords - IPL60R180P6 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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