IPD50R380CE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPD50R380CE
Маркировка: 5R380CE
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 73 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 9.9 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 5.6 ns
Выходная емкость (Cd): 40 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.38 Ohm
Тип корпуса: TO-252
Аналог (замена) для IPD50R380CE
IPD50R380CE Datasheet (PDF)
ipd50r380ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPD50R380CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R380CEDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp
ipd50r380ce.pdf
isc N-Channel MOSFET Transistor IPD50R380CE,IIPD50R380CEFEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r399cp.pdf
IPD50R399CPCoolMOSTM Power TransistorProduct SummaryProduct SummaryFeaturesV"1 @Tjmax 550 VV"1 @Tjmax 550 VV *EL;HI
ipd50r399cp rev2 1b.pdf
IPD50R399CPCoolMOSTM Power TransistorProduct SummaryProduct SummaryFeaturesV"1 @Tjmax 550 VV"1 @Tjmax 550 VV *EL;HI
ipd50r3k0ce ipu50r3k0ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R3K0CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPD50R3K0CE, IPU50R3K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd50r399cp.pdf
isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CPFEATURESStatic drain-source on-resistance:RDS(on)399mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
ipd50r3k0ce.pdf
isc N-Channel MOSFET Transistor IPD50R3K0CE,IIPD50R3K0CEFEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV G
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