IPD025N06N - параметры транзистора MOSFET, его аналоги, datasheet

IPD025N06N Datasheet (PDF)

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TypeIPD025N06NOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 2.5 mW 100% avalanche testedID 90 A Superior thermal resistanceQOSS 81 nC N-channel, normal levelQG(0V..10V) 71 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge

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isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06NFEATURESStatic drain-source on-resistance:RDS(on)2.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

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TypeIPD024N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for synchronous rectificationVDS 60 V 100% avalanche testedRDS(on),max 2.4mW Superior thermal resistanceID 90 A N-channel, normal levelQOSS nC81 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC71 Pb-free lead plating; RoHS compliant Halogen-fre

Другие MOSFET... IPD06N03LBG , IPD060N03L , IPD053N06N , IPD050N03L , IPD04N03LBG , IPD040N03L , IPD03N03LAG , IPD031N03L , IRFB3607 , IPD024N06N , IPB90R340C3 , IPB80N06S3L-05 , IPB65R660CFDA , IPB65R420CFD , IPB65R310CFDA , IPB65R310CFD , IPB65R225C7 .