IPD025N06N - параметры транзистора MOSFET, его аналоги, datasheet

IPD025N06N Datasheet (PDF)

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TypeIPD025N06NOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 2.5 mW 100% avalanche testedID 90 A Superior thermal resistanceQOSS 81 nC N-channel, normal levelQG(0V..10V) 71 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge

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isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06NFEATURESStatic drain-source on-resistance:RDS(on)2.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

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TypeIPD024N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for synchronous rectificationVDS 60 V 100% avalanche testedRDS(on),max 2.4mW Superior thermal resistanceID 90 A N-channel, normal levelQOSS nC81 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC71 Pb-free lead plating; RoHS compliant Halogen-fre

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .