IPB65R310CFDA - описание и поиск аналогов

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 ipb65r310cfda ipp65r310cfda.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R310CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPB65R310CFDA, IPP65R310CFDA D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) princi

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 ipa65r310cfd ipb65r310cfd ipi65r310cfd ipp65r310cfd ipw65r310cfd ipw65r310cfd ipb65r310cfd ipp65r310cfd ipa65r310cfd ipi65r310cfd.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R310CFD Data Sheet Rev. 2.3 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R310CFD , IPB65R310CFD , IPP65R310CFD IPA65R310CFD , IPI65R310CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage

 2.2. Size:258K  inchange semiconductor
 ipb65r310cfd.pdf 

Isc N-Channel MOSFET Transistor IPB65R310CFD FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

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 ipb65r380c6.pdf 

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K

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 ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Rev. 2.2, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MO

 7.3. Size:258K  inchange semiconductor
 ipb65r380c6.pdf 

Isc N-Channel MOSFET Transistor IPB65R380C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V