Справочник MOSFET. FDD6N50TM

 

FDD6N50TM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDD6N50TM

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 89 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5 V

Максимально допустимый постоянный ток стока (Id): 6 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 55 ns

Выходная емкость (Cd): 95 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.9 Ohm

Тип корпуса: D-PAK

Аналог (замена) для FDD6N50TM

 

 

FDD6N50TM Datasheet (PDF)

1.1. fdd6n50tm f085.pdf Size:941K _fairchild_semi

FDD6N50TM
FDD6N50TM

November 2010 FDD6N50TM_F085 500V N-Channel MOSFET Features Description • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 12.8 nC) stripe, DMOS technology. • Low Crss ( typical 9 pF) This advanced technology has been especially tailored to

1.2. fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf Size:458K _fairchild_semi

FDD6N50TM
FDD6N50TM

November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 9 p

 3.1. fdd6n50f fdu6n50f.pdf Size:648K _fairchild_semi

FDD6N50TM
FDD6N50TM

July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar • Low gate charge ( Typ. 15nC) stripe, DMOS technology. • Low Crss ( Typ. 6.3pF) This advance technology has

3.2. fdd6n50 fdu6n50.pdf Size:851K _fairchild_semi

FDD6N50TM
FDD6N50TM

January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 12.8 nC) stripe, DMOS technology. • Low Crss ( typical 9 pF) This advanced technology has been especially tai

Другие MOSFET... FDD6688S , FDD6696 , FDD6776A , FDD6780 , FDD6782A , FDD6796 , FDD6N20TF , FDD6N50TF , IRF150 , FDD7030BL , FDD7N25LZTM , FDD7N60NZTM , FDD8580 , FDD8586 , FDD86367_F085 , FDD86369_F085 , FDD8750 .

 

 
Back to Top