FDJ128N - параметры транзистора MOSFET, его аналоги, datasheet

FDJ128N Datasheet (PDF)

..1. Size:173K fairchild semi
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August 2004 FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description Features This N-Channel -2.5V specified MOSFET uses 5.5 A, 20 V. RDS(ON) = 35 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 51 m @ VGS = 2.5 V It has been optimized for battery power management applications. Low gate charge Application

9.1. Size:170K fairchild semi
fdj127p.pdf pdf_icon

July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -1.8V specified MOSFET uses 4.1 A, 20 V. RDS(ON) = 60 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 85 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 133 m @ VGS = 1.8 V management

9.2. Size:311K fairchild semi
fdj129p.pdf pdf_icon

November 2007tmFDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -2.5V specified MOSFET uses 4.2 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 120 m @ VGS = 2.5 V It has been optimized for battery power management applications. Low gate ch

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