FDMS86150ET100 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMS86150ET100
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 187 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 128 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 8.3 ns
Cossⓘ - Выходная емкость: 696 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00485 Ohm
Тип корпуса: POWER56
Аналог (замена) для FDMS86150ET100
FDMS86150ET100 Datasheet (PDF)
fdms86150et100.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86150et100.pdf

January 2015FDMS86150ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 128 A, 4.85 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This p
fdms86150.pdf

November 2013FDMS86150N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the
fdms86150a.pdf

December 2014FDMS86150AN-Channel Shielded Gate PowerTrench MOSFET100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the
Другие MOSFET... FDMC8676 , FDMC8678S , FDMD85100 , FDMD86100 , FDMD8900 , FDME0106NZT , FDMS0308CS , FDMS8050ET30 , IRF740 , FDMS86202ET120 , FDMS86255ET150 , FDMS86350ET80 , FDMS86369F085 , FDMS86550ET60 , FDMS86568F085 , FDMS8660AS , FDMS8660S .
History: AP09N70R-H | APQ65SN06AH | PMPB13XNE | IPP50R399CP | SSW65R065SFD3 | AP96T07AGP-HF | NTMFS024N06C
History: AP09N70R-H | APQ65SN06AH | PMPB13XNE | IPP50R399CP | SSW65R065SFD3 | AP96T07AGP-HF | NTMFS024N06C



Список транзисторов
Обновления
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