All MOSFET. FDMS86150ET100 Datasheet

 

FDMS86150ET100 Datasheet and Replacement


   Type Designator: FDMS86150ET100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 128 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8.3 nS
   Cossⓘ - Output Capacitance: 696 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00485 Ohm
   Package: POWER56
      - MOSFET Cross-Reference Search

 

FDMS86150ET100 Datasheet (PDF)

 ..1. Size:358K  1
fdms86150et100.pdf pdf_icon

FDMS86150ET100

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:316K  fairchild semi
fdms86150et100.pdf pdf_icon

FDMS86150ET100

January 2015FDMS86150ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 128 A, 4.85 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This p

 5.1. Size:298K  fairchild semi
fdms86150.pdf pdf_icon

FDMS86150ET100

November 2013FDMS86150N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the

 5.2. Size:268K  fairchild semi
fdms86150a.pdf pdf_icon

FDMS86150ET100

December 2014FDMS86150AN-Channel Shielded Gate PowerTrench MOSFET100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE1502R | BUZ84 | IRLR024 | AON6794 | APT6017LFLLG | CED05N8 | BL10N70-A

Keywords - FDMS86150ET100 MOSFET datasheet

 FDMS86150ET100 cross reference
 FDMS86150ET100 equivalent finder
 FDMS86150ET100 lookup
 FDMS86150ET100 substitution
 FDMS86150ET100 replacement

 

 
Back to Top

 


 
.