All MOSFET. FDMS86150ET100 Datasheet

 

FDMS86150ET100 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMS86150ET100

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 187 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 128 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 8.3 nS

Drain-Source Capacitance (Cd): 696 pF

Maximum Drain-Source On-State Resistance (Rds): 0.00485 Ohm

Package: Power56

FDMS86150ET100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS86150ET100 Datasheet (PDF)

1.1. fdms86150et100.pdf Size:316K _upd-mosfet

FDMS86150ET100
FDMS86150ET100

January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 128 A, 4.85 mΩ Features Extended TJ rating to 175°C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p

1.2. fdms86150.pdf Size:298K _fairchild_semi

FDMS86150ET100
FDMS86150ET100

November 2013 FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

 1.3. fdms86150a.pdf Size:268K _fairchild_semi

FDMS86150ET100
FDMS86150ET100

December 2014 FDMS86150A N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

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