Справочник MOSFET. FDS4080N7

 

FDS4080N7 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDS4080N7
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 357 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SO-8
 

 Аналог (замена) для FDS4080N7

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDS4080N7 Datasheet (PDF)

 ..1. Size:180K  fairchild semi
 fds4080n7.pdf pdf_icon

FDS4080N7

February 2004 FDS4080N7 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 40 V RDS(ON) = 10 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

 6.1. Size:171K  fairchild semi
 fds4080n3.pdf pdf_icon

FDS4080N7

February 2004 FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 40 V RDS(ON) = 10.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has be

 9.1. Size:176K  fairchild semi
 fds4072n7.pdf pdf_icon

FDS4080N7

February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High

 9.2. Size:171K  fairchild semi
 fds4070n3.pdf pdf_icon

FDS4080N7

February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

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Другие MOSFET... FDS3670 , FDS3680 , FDS3682 , FDS4070N3 , FDS4070N7 , FDS4072N3 , FDS4072N7 , FDS4080N3 , IRF730 , FDS4410A , FDS4770 , FDS4780 , FDS5170N7 , FDS5682 , FDS5692Z , FDS6064N3 , FDS6064N7 .

History: AFP8931 | CEP18N5 | AP6N3R7MT | MMP9435BDY | IRF5M3205 | HCS70R710ST | IRFH7194

 

 
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