FDS4080N7 Datasheet. Specs and Replacement

Type Designator: FDS4080N7  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 357 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SO-8

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FDS4080N7 substitution

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FDS4080N7 datasheet

 ..1. Size:180K  fairchild semi
 fds4080n7.pdf pdf_icon

FDS4080N7

February 2004 FDS4080N7 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 40 V RDS(ON) = 10 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been ... See More ⇒

 6.1. Size:171K  fairchild semi
 fds4080n3.pdf pdf_icon

FDS4080N7

February 2004 FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 40 V RDS(ON) = 10.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has be... See More ⇒

 9.1. Size:176K  fairchild semi
 fds4072n7.pdf pdf_icon

FDS4080N7

February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High... See More ⇒

 9.2. Size:171K  fairchild semi
 fds4070n3.pdf pdf_icon

FDS4080N7

February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been ... See More ⇒

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Detailed specifications: FDS3670, FDS3680, FDS3682, FDS4070N3, FDS4070N7, FDS4072N3, FDS4072N7, FDS4080N3, IRFZ46N, FDS4410A, FDS4770, FDS4780, FDS5170N7, FDS5682, FDS5692Z, FDS6064N3, FDS6064N7

Keywords - FDS4080N7 MOSFET specs

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