All MOSFET. FDS4080N7 Datasheet

 

FDS4080N7 Datasheet and Replacement


   Type Designator: FDS4080N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 357 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SO-8
 

 FDS4080N7 substitution

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FDS4080N7 Datasheet (PDF)

 ..1. Size:180K  fairchild semi
 fds4080n7.pdf pdf_icon

FDS4080N7

February 2004 FDS4080N7 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 40 V RDS(ON) = 10 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

 6.1. Size:171K  fairchild semi
 fds4080n3.pdf pdf_icon

FDS4080N7

February 2004 FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 40 V RDS(ON) = 10.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has be

 9.1. Size:176K  fairchild semi
 fds4072n7.pdf pdf_icon

FDS4080N7

February 2004 FDS4072N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.4 A, 40 V RDS(ON) = 11 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High

 9.2. Size:171K  fairchild semi
 fds4070n3.pdf pdf_icon

FDS4080N7

February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 15.3 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been

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Datasheet: FDS3670 , FDS3680 , FDS3682 , FDS4070N3 , FDS4070N7 , FDS4072N3 , FDS4072N7 , FDS4080N3 , IRF730 , FDS4410A , FDS4770 , FDS4780 , FDS5170N7 , FDS5682 , FDS5692Z , FDS6064N3 , FDS6064N7 .

History: HSS2312A

Keywords - FDS4080N7 MOSFET datasheet

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